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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2558 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min) *High DC Current Gain: hFE= 1500( Min.) @(IC= 1A, VCE= 5V) *Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ (IC= 1A, IB= 5mA) B APPLICATIONS *Designed for series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww scs .i VALUE 200 V 200 V 6 V 5 A 2 A UNIT .cn mi e IC Collector Current-Continuous IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC 60 W TJ 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff current Emitter Cutoff current DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= 10mA, IB= 0 IC= 1A ,IB= 5mA VCB= 200V, IE= 0 VEB= 6V, IC= 0 IC= 1A; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz 1500 MIN 200 2SD2558 TYP. MAX UNIT V 1.5 0.1 5.0 6500 110 15 V mA mA ww w sem isc . IE= -0.5A; VCE= 10V .cn i pF MHz isc Websitewww.iscsemi.cn 2 |
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